Investigation of SOI MOSFETs with ultimate thickness

Abstract Ultra-thin SOI MOSFETs with 1–5nm thick SOI film, are experimentally and theoretically investigated. Single- and double-gate configurations are compared; the double-gate MOSFET exhibits a substantial increase in transconductance, presumably resulting from volume inversion. Most of the experimental data can be explained by combining classical models with self-consistent quantum calculations. The characteristics are well-behaved and reveal unique “ultra-thin” film properties: enhanced interface coupling and body-substrate coupling, degraded mobility, increased threshold voltage.