Architecture and Process Integration Overview of 3D NAND Flash Technologies

In the past few decades, NAND flash memory has been one of the most successful nonvolatile storage technologies, and it is commonly used in electronic devices because of its high scalability and reliable switching properties. To overcome the scaling limit of planar NAND flash arrays, various three-dimensional (3D) architectures of NAND flash memory and their process integration methods have been investigated in both industry and academia and adopted in commercial mass production. In this paper, 3D NAND flash technologies are reviewed in terms of their architecture and fabrication methods, and the advantages and disadvantages of the architectures are compared.

[1]  Kiwamu Sakuma,et al.  Highly Scalable Horizontal Channel 3-D NAND Memory Excellent in Compatibility With Conventional Fabrication Technology , 2013, IEEE Electron Device Letters.

[2]  Alessandro S. Spinelli,et al.  Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array—Part I: Cell Operation , 2019, IEEE Transactions on Electron Devices.

[3]  Evangelos Eleftheriou,et al.  Accurate deep neural network inference using computational phase-change memory , 2019, Nature Communications.

[4]  Il Han Park,et al.  A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory , 2018, IEEE Journal of Solid-State Circuits.

[5]  Leng Chen,et al.  Crystallization behavior and electrical characteristics of Ga–Sb thin films for phase change memory , 2020, Nanotechnology.

[6]  Xiaobo Sharon Hu,et al.  A Parallel Multibit Programing Scheme With High Precision for RRAM-Based Neuromorphic Systems , 2020, IEEE Transactions on Electron Devices.

[7]  Jong-Ho Lee,et al.  Unsupervised online learning of temporal information in spiking neural network using TFT-type NOR flash memory devices. , 2019, Nanotechnology.

[8]  Shuo Cao,et al.  Uniform multilevel switching of graphene oxide-based RRAM achieved by embedding with gold nanoparticles for image pattern recognition , 2020 .

[9]  Kyungchul Park,et al.  A Novel Vector-matrix Multiplication (VMM) Architecture based on NAND Memory Array , 2020 .

[10]  Shimeng Yu,et al.  Technological Design of 3D NAND-Based Compute-in-Memory Architecture for GB-Scale Deep Neural Network , 2021, IEEE Electron Device Letters.

[11]  Wook-Ghee Hahn,et al.  A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate , 2016, IEEE Journal of Solid-State Circuits.

[12]  Hyungjin Kim,et al.  4K-memristor analog-grade passive crossbar circuit , 2019, Nature Communications.

[13]  J. Robertson,et al.  Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing , 2019 .

[14]  Byung-Gook Park,et al.  Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array , 2020 .

[15]  Myounggon Kang,et al.  Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray , 2012, IEEE Transactions on Electron Devices.

[16]  Jeong-Don Ihm,et al.  256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers , 2017, IEEE Journal of Solid-State Circuits.

[17]  Minkyu Shin,et al.  Investigation on Phase-change Synapse Devices for More Gradual Switching , 2019 .

[18]  Byung-Gook Park,et al.  3-bit multilevel operation with accurate programming scheme in TiO x /Al2O3 memristor crossbar array for quantized neuromorphic system , 2021, Nanotechnology.

[19]  Xu Wei,et al.  Manipulation of the electrical behaviors of Cu/MXene/SiO2/W memristor , 2019, Applied Physics Express.

[20]  Jun B. Rho,et al.  Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics , 2019, Applied Sciences.

[21]  Byung-Gook Park,et al.  Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic system , 2017, Nanotechnology.

[22]  Yoon Kim,et al.  AND Flash Array Based on Charge Trap Flash for Implementation of Convolutional Neural Networks , 2020, IEEE Electron Device Letters.

[23]  Ethan C. Ahn,et al.  Understanding the effect of dry etching on nanoscale phase-change memory , 2019, Nanotechnology.

[24]  Byung-Gook Park,et al.  Silicon-Based Floating-Body Synaptic Transistor With Frequency-Dependent Short- and Long-Term Memories , 2016, IEEE Electron Device Letters.

[25]  Piero Olivo,et al.  Architectural and Integration Options for 3D NAND Flash Memories , 2017, Comput..

[26]  Yoon-Hee Choi,et al.  Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming , 2014, IEEE Journal of Solid-State Circuits.

[27]  Jun Tae Jang,et al.  Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System , 2020, IEEE Access.

[28]  Sung Min Kim,et al.  A stacked memory device on logic 3D technology for ultra-high-density data storage , 2011, Nanotechnology.

[29]  Zhisheng Huang,et al.  The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance , 2019, IEEE Electron Device Letters.

[30]  Byung-Gook Park,et al.  Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory , 2011, IEEE Transactions on Electron Devices.

[31]  Byung-Gook Park,et al.  Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM , 2020 .

[32]  Byung-Gook Park,et al.  System-Level Simulation of Hardware Spiking Neural Network Based on Synaptic Transistors and I&F Neuron Circuits , 2018, IEEE Electron Device Letters.

[33]  Byung-Gook Park,et al.  Spiking Neural Network Using Synaptic Transistors and Neuron Circuits for Pattern Recognition With Noisy Images , 2018, IEEE Electron Device Letters.

[34]  S. Ambrogio,et al.  Emerging neuromorphic devices , 2019, Nanotechnology.

[35]  Sung-Tae Lee,et al.  NAND Flash Based Novel Synaptic Architecture for Highly Robust and High-Density Quantized Neural Networks With Binary Neuron Activation of (1, 0) , 2020, IEEE Access.

[36]  H. Wong,et al.  Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2 , 2019, Applied Physics Letters.