Adsorption/desorption kinetics of H2O on GaAs(100) measured by photoreflectance

The mechanism of H2O adsorption on GaAs(100) has been elucidated by an adaptation of the photoreflectance (PR) technique for surface kinetic measurements. Being an optical method, PR is especially well‐suited for probing weakly bonded adsorption systems where the pressures required for significant interaction (≳10−5 Torr) preclude the use of traditional electron or ion spectroscopies. H2O adsorbs through a physisorbed state. This species can desorb or react to a chemisorbed form, which in turn can desorb. Both the physisorbed and chemisorbed species are undissociated. We interpret exceptionally low values for the prefactors associated with the chemisorbed state in terms of an adsorbate‐induced surface reconstruction.

[1]  S. Stock,et al.  Etching of GaAs(100) by Activated Hydrogen , 1990 .

[2]  E. Seebauer Oxidation and annealing of GaAs (100) studied by photoreflectance , 1989 .

[3]  E. Seebauer Adsorption of CO, O2, and H2O on GaAs(100): Photoreflectance studies , 1989 .

[4]  J. Woodall,et al.  Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C , 1988 .

[5]  N. Takado,et al.  GaAs cleaning with a hydrogen radical beam gun in an ultrahigh‐vacuum system , 1988 .

[6]  Robert Glosser,et al.  Modulation spectroscopy as a tool for electronic material characterization , 1988 .

[7]  J. Massies,et al.  Residual Carbon and Oxygen Surface Contamination of Chemically Etched GaAs (001) Substrates , 1986 .

[8]  W. Mokwa,et al.  TDS and LEED studies of H2O adsorption on GaAs(110) , 1984 .

[9]  A. Y. Cho,et al.  Growth of III–V semiconductors by molecular beam epitaxy and their properties , 1983 .

[10]  C. Webb,et al.  Formation of alternative surface oxide phases on GaAs by adsorption of O2 or H2O: A UPS, XPS, and SIMS study , 1982 .

[11]  K. Freed,et al.  Theoretical test of nonequilibrium experimental method for measuring heats of adsorption , 1981 .

[12]  R. S. Bauer,et al.  Surface phases of GaAs(100) and AlAs(100) , 1981 .

[13]  M. Liehr,et al.  Gas adsorption on cleaved GaAs(110) surfaces studied by surface photovoltage spectroscopy , 1979 .

[14]  H. Lüth,et al.  Adsorption of water and methanol on GaAs(110) surfaces studied by ultraviolet photoemission , 1979 .

[15]  P. Saget,et al.  Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth , 1979 .

[16]  K. Jacobi,et al.  Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES , 1978 .

[17]  P. Pianetta,et al.  Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP , 1978 .

[18]  C. D. Thurmond The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP , 1975 .

[19]  A. A. Studna,et al.  High-resolution electroreflectance measurements of GaAs , 1973 .

[20]  David E. Aspnes,et al.  Third-derivative modulation spectroscopy with low-field electroreflectance , 1973 .

[21]  J. Palau,et al.  Chemical etching and annealing induced GaAs(100) surface properties , 1984 .

[22]  T. S. Moss,et al.  Handbook on semiconductors , 1980 .

[23]  D. Edwards Peak widths of elementary first and second order desorption transients , 1976 .