Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimetre-wave applications

This paper reviews the current knowledge of reliability and degradation issues connected with the presence of hot electron and impact ionization conditions in GaAs and InP HEMTs for high frequency analogue applications. The physical phenomena taking place in HEMTs at large drain-source electric fields (electron heating, real-space transfer, impact ionization, light emission, gate-drain breakdown) are first described, then the paper moves on to list and discuss the main degradation modes and mechanisms these conditions may bear. Finally, some conclusive remarks are given as to the main requisites for achieving hot electron robustness in HEMTs.

[1]  A. Paccagnella,et al.  Study of Low-Temperature Degradation of AlGaAs/InGaAs Pseudomorphic HEMT's , 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.

[2]  H. Matsumoto,et al.  Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIGFETs , 1998 .

[3]  C. Canali,et al.  Dependence of ionization current on gate bias in GaAs MESFETs , 1993 .

[4]  Roberto Menozzi,et al.  Breakdown walkout in pseudomorphic HEMT's , 1996 .

[5]  Y.C. Chen,et al.  Off-state breakdown effects on gate leakage current in power pseudomorphic AlGaAs/InGaAs HEMTs , 1996, IEEE Electron Device Letters.

[6]  Enrico Zanoni,et al.  Electron detrapping enhanced by electric field in AlGaAs/GaAs HEMTs , 1990 .

[7]  R. Leoni,et al.  Effects of reverse gate-drain breakdown on gradual degradation of power PHEMTs , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[8]  F. Fantini,et al.  A study of hot-electron degradation effects in pseudomorphic HEMTs , 1997 .

[9]  C. Su,et al.  Semi-analytical analysis for optimization of 0.1-/spl mu/m InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability , 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

[10]  N. Moll,et al.  Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs , 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

[11]  J.C.M. Hwang,et al.  Breakdown effects on the performance and reliability of power MESFETs , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[12]  Y. Baeyens,et al.  The effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs , 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

[13]  Y.C. Chou,et al.  Hot carrier reliability in high-power PHEMTs , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[14]  G. Meneghesso,et al.  Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMTs induced by hot-electrons , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

[15]  T. Enoki,et al.  Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs , 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

[16]  A. Paccagnella,et al.  Impact ionization and light emission in AlGaAs/GaAs HEMT's , 1992 .

[17]  Roberto Menozzi,et al.  The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs , 1996 .

[18]  Alessandro Paccagnella,et al.  Evidence of interface trap creation by hot‐electrons in AlGaAs/GaAs high electron mobility transistors , 1996 .

[19]  A. Neviani,et al.  Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs , 1996, International Electron Devices Meeting. Technical Digest.

[20]  Y. C. Chou,et al.  Reliability and alleviation of premature on-state avalanche breakdown in deep submicron power PHEMTs , 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.

[21]  C. Canali,et al.  Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs , 1993 .

[22]  Roberto Menozzi,et al.  Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's , 1998 .

[23]  Hiroshi Ito,et al.  High-energy and recombination-induced electroluminescence of InAlAs/InGaAs HEMT's lattice-matched to InP substrates , 1997 .

[24]  T. Enoki,et al.  Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates , 1995, IEEE Electron Device Letters.

[25]  G. Meneghesso,et al.  Trapped charge modulation: a new cause of instability in AlGaAs/InGaAs pseudomorphic HEMT's , 1996, IEEE Electron Device Letters.

[26]  R. D. Grober,et al.  Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors , 1995, IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers.

[27]  Y. Baeyens,et al.  On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMTs , 1997, IEEE Microwave and Guided Wave Letters.

[28]  F. Fantini,et al.  On the correlation between drain and gate currents and light emission in GaAs PHEMTs biased in the impact ionization regime , 1998 .

[29]  A. Paccagnella,et al.  Correlation between surface-state density and impact ionization phenomena in GaAs MESFET's , 1991 .

[30]  Michael S. Shur,et al.  Breakdown walkout in AlAs/GaAs HEMTs , 1992 .

[31]  J. Alamo,et al.  Off-state breakdown in InAlAs/InGaAs MODFET's , 1995 .

[32]  R. Leoni,et al.  Conductance DLTS analysis of the correlation between power slump and gate lag , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[33]  P. Ladbrooke,et al.  Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies , 1988 .

[34]  J.A. del Alamo,et al.  Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs , 1996, IEEE Electron Device Letters.

[35]  K. Yamaguchi,et al.  Surface potential effect on gate—Drain avalanche breakdown in GaAs MESFET's , 1987, IEEE Transactions on Electron Devices.

[36]  K. Christianson.  Role of Interface-States in the Reverse Bias Aging of GaAs Schottky Barriers , 1990 .