InP/InGaAs heterojunction bipolar transistor circuits for high bit-rate ETDM transmission systems

Several ICs based on InP/InGaAs DHBT technology and suitable for future 40 Gb/s ETDM optical transmission systems are presented. More than 25 Gb/s operation has been obtained with an MS-DFF circuit, latched and double-latched multiplexer. A 28 GHz static frequency divider and a 46 Gb/s MUX are reported. Finally, a MUX-driver able to supply 2 Vpp at 40 Gb/s is presented. The experimental results obtained, in the state of the art, demonstrate the strong potential of the InP-based HBT technology.

[1]  Agnieszka Konczykowska,et al.  44 Gb/s InP DHBT MUX-Driver IC for external laser modulation , 1999 .

[2]  K. Runge,et al.  40 Gbit/s AlGaAs/GaAs HBT 4:1 multiplexer IC , 1995 .

[3]  Hans-Martin Rein,et al.  Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s , 1996, IEEE J. Solid State Circuits.

[4]  D. Daniel.  Novel 4:1 multiplexer circuit for Gbit/s data rates , 1990 .

[5]  Hannu Tenhunen,et al.  InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 V , 1997 .

[6]  H. Kikuchi,et al.  Fully electrical 40-Gbit/s TDM system prototype and its application to 160-Gbit/s WDM transmission , 1999, OFC/IOOC . Technical Digest. Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication.

[7]  Y. Imai,et al.  40-Gbit/s ICs for future lightwave communications systems , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.