A High-Voltage LDMOS Compatible With High-Voltage Integrated Circuits on p-Type SOI Layer
暂无分享,去创建一个
Wei Zhang | Jing Xu | Bo Zhang | Ming Qiao | Zhaoji Li | Xiaorong Luo | Huanmei Gao | Wei Zhang | B. Zhang | J. Xu | Zhaoji Li | X. Luo | M. Qiao | Jian Fang | T. Lei | Zhiqiang Xiao | Jian Fang | Yuangang Wang | Yuangang Wang | Hao Deng | H. Gao | Zhengcai Chen | Tianfei Lei | Hao Deng | Zhiqiang Xiao | Zhengcai Chen
[1] F. Udrea,et al. Thick silicon membrane technology for reliable and high performance operation of high voltage LIGBTs in Power ICs , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.
[2] Bo Zhang,et al. Realization of High Voltage ($≫ \hbox{700}$ V) in New SOI Devices With a Compound Buried Layer , 2008, IEEE Electron Device Letters.
[3] S. Mukherjee,et al. Realization of high breakdown voltage (>700 V) in thin SOI devices , 1991, [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.
[4] Bo Zhang,et al. A Novel 700-V SOI LDMOS With Double-Sided Trench , 2007, IEEE Electron Device Letters.
[5] Akio Nakagawa,et al. Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film , 1991 .
[6] Bo Zhang,et al. New High-Voltage ( $>$ 1200 V) MOSFET With the Charge Trenches on Partial SOI , 2008, IEEE Transactions on Electron Devices.
[7] H. Kobayashi,et al. 250V-Class Lateral SOI Devices for Driving HDTV PDPs , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
[8] Bo Zhang,et al. High-Voltage Technology Based on Thin Layer SOI for Driving Plasma Display Panels , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.
[9] F. Udrea,et al. High voltage devices - a milestone concept in power ICs , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..