论文信息 - Enhancement of laser‐induced defect‐initiated Ga0 emission from GaAs(110) surfaces by Br adsorption

Enhancement of laser‐induced defect‐initiated Ga0 emission from GaAs(110) surfaces by Br adsorption

High sensitivity measurements of Ga emission, produced by laser irradiation of fluences below the ablation threshold, from a Br‐adsorbed GaAs(110) surface were carried out. It was found that bromine adsorption enhances Ga0 emission: the amount of enhancement is linearly proportional to the amount of adsorbates but much smaller in the absolute value. The result is interpreted as a Br‐induced weakening of the Ga—As bond on defect sites by Br adsorption.

N. Itoh | R. Haglund | J. Kanasaki | A. Matsuura | Y. Nakai

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