Wavelength shift in vertical cavity laser arrays on a patterned substrate

The authors demonstrate a spatially chirped emission wavelength in vertical cavity surface emitting laser (VCSEL) arrays grown by molecular beam epitaxy. The wavelength shift is due to a lateral thickness variation in the Al/sub 0.2/Ga/sub 0.8/As cavity, which is induced by a substrate temperature profile during growth. A 20 nm shift in lasing wavelength is obtained in a VCSEL array.