论文信息 - First Observation of Bias Oscillations in GaN Gunn Diodes on GaN Substrate

First Observation of Bias Oscillations in GaN Gunn Diodes on GaN Substrate

In this paper, we report on the bias oscillation of GaN-based Gunn diodes realized on a n+-GaN substrate. Different contact materials, ambient gases, and pulsewidths were used and compared with regard to device stability. A wide negative- differential-resistance (NDR) region was measured for electrical- field values E larger than a threshold field Eth of 150 kV/cm. Electrical fields much higher than the threshold value did not lead to any electromigration effects or discharging problems from the contacts. The drift velocity derived from the current-voltage characteristics, diode geometry, and doping concentration in the active layer was estimated to be 1.9 times 107 cm/s. Bias oscillations were obtained for the GaN Gunn diodes in the presence of a series inductance.

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