论文信息 - Measurement of intrinsic capacitance of lightly doped drain (LDD) MOSFET's

Measurement of intrinsic capacitance of lightly doped drain (LDD) MOSFET's

Intrinsic capacitance of lightly doped drain (LDD) MOSFET's is measured by means of a four-terminal method without using any on-chip measurement circuits. The gate-to-drain capacitance Cgdof LDD MOSFET's is smaller than that of conventional MOSFET's in the saturation region. The technique is applied to determine the effective channel length.

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