An Analytical Model for Deriving the 3-D Potentials and the Front and Back Gate Threshold Voltages of a Mesa- Isolated Small Geometry Fully Depleted SOI MOSFET

For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, back, and side-wall oxide layers can be derived three- dimensionally. Using Taylor's series expansions of the trigonometric functions, the derived potentials are written in terms of the natural length that can be determined by using the derived formula. From the derived 3-D potentials, the minimum values of the front and the back surface potentials are derived and used to obtain the closed-form expressions for the front and back gate threshold voltages as functions of various device parameters and applied bias voltages. Obtained results can be found to explain the drain- induced threshold voltage roll-off and the narrow width effect of a fully depleted small geometry SOI MOSFET in a unified manner.

[1]  Deepak Bhatnagar,et al.  Three-dimensional analytic modelling of front and back gate threshold voltages for small geometry fully depleted SOI MOSFET's , 2011 .

[2]  D. Flandre,et al.  Modeling of ultrathin double-gate nMOS/SOI transistors , 1994 .

[3]  Zhiping Yu,et al.  Scaling Theory for FinFETs Based on 3-D Effects Investigation , 2007, IEEE Transactions on Electron Devices.

[4]  Han-Pang Wang,et al.  A simple 2D analytical threshold voltage model for fully depleted short-channel silicon-on-insulator MOSFETs , 2004 .

[5]  Hyung-Kyu Lim,et al.  Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's , 1983, IEEE Transactions on Electron Devices.

[6]  R. S. Gupta,et al.  Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural Modifications , 2012 .

[7]  Mansun Chan,et al.  Threshold voltage model for deep-submicrometer fully depleted SOI MOSFET's , 1995 .

[8]  Hans-Oliver Joachim,et al.  Simulation and two-dimensional analytical modeling of subthreshold slope in ultrathin-film SOI MOSFETs down to 0.1 mu m gate length , 1993 .

[9]  Jason C. S. Woo,et al.  Two-dimensional analytic modeling of very thin SOI MOSFETs , 1990 .

[10]  Sorin Cristoloveanu,et al.  3D analytical modelling of subthreshold characteristics in vertical Multiple-gate FinFET transistors , 2011 .

[11]  A. DasGupta,et al.  Threshold Voltage model for mesa-isolated small geometry fully depleted SOI MOSFETs based on analytical solution of 3-D Poisson's equation , 2004, IEEE Transactions on Electron Devices.

[12]  T. Sugii,et al.  Analytical threshold voltage model for short channel double-gate SOI MOSFETs , 1996 .

[13]  Jason C. S. Woo,et al.  Subthreshold characteristics of fully depleted submicrometer SOI MOSFET's , 1995 .

[14]  K. K. Young.  Short-channel effect in fully depleted SOI MOSFETs , 1989 .

[15]  S. Veeraraghavan,et al.  Short-channel effects in SOI MOSFETs , 1989 .

[16]  Rongtian Zhang,et al.  Low-power high-performance double-gate fully depleted SOI circuit design , 2002 .

[17]  Chung Ha Suh,et al.  Analytical model for deriving the threshold voltage of a short gate SOI MESFET with vertically non-uniformly doped silicon film , 2010, IET Circuits Devices Syst..

[18]  C. Suh.  Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET , 2011 .

[19]  Chung Ha Suh.  A simple analytical model for the front and back gate threshold voltages of a fully-depleted asymmetric SOI MOSFET , 2008 .

[20]  Ching-Yuan Wu,et al.  A new 2-D analytic threshold-voltage model for fully depleted short-channel SOI MOSFET's , 1993 .

[21]  K. F. Lee,et al.  Scaling the Si MOSFET: from bulk to SOI to bulk , 1992 .