E-pHEMT complements HBT - may challenge below 3 V

Abstract A topic of much debate in gallium arsenide IC manufacturing currently is the challenge to HBTs from new Enhancement-mode pHEMT transistors for power amplifiers in low-volt-age, portable wireless handsets. This was reflected in panel session at 22 nd IEEE GaAs IC Symposium in Seatlle last November (”E-mode pHEMTs are killing HBTs“) and, more recently, by the first E-pHEMT product launches by leading GaAs RFIC manufacturers.