论文信息 - Anisotropic-etching simulation of InP and Si

Anisotropic-etching simulation of InP and Si

Abstract A new etching simulator is presented which takes advantage of cellular and geometrically based models. The crystalline solid is represented by cubic primitive cells so that the model can easily be applied to diamond and zincblende lattices. Anisotropic etching behaviour is accounted for by experimentally determined etching rates of only a few distinct crystallographic planes. Thus, even geometrically complex structures can be simulated without extended experimental or calculational effort. The versatility of the simulator is demonstrated for InP in HBr and Si in KOH–isopropanol, resulting in good agreement between simulation and experiment.

Andreas Schlachetzki | M. Chahoud | Hergo-Heinrich Wehmann

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