Aging and baking effects on the radiation hardness of MOS capacitors

A decrease in the oxide-charge trapping efficiency of Al- and TaSi-Al-gate MOS capacitors with oxide thicknesses ranging from 33 to 100 nm was observed after more than 14 years of room-temperature storage. The decrease in trapping efficiency can be reduced or even eliminated in Al-gate (and to a lesser degree TaSi-Al) devices by baking them at temperatures up to /spl sim/200 /spl deg/C. This change in aged-device radiation response after baking is largely independent of baking time, at least for 1-18 h bakes. Poly-Si gate capacitors processed and stored under similar conditions show no significant change in radiation hardness due to aging or baking. Mechanisms responsible for this behavior and implications of the results for hardness assurance are discussed.

[1]  Arthur H. Edwards,et al.  Post‐irradiation cracking of H2 and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors , 1993 .

[2]  R. L. Pease,et al.  Impact of aging on radiation hardness[CMOS SRAMs] , 1997 .

[3]  Daniel M. Fleetwood,et al.  Impact of Aging on Radiation Hardness , 1997 .

[4]  P. S. Winokur,et al.  The Response of MOS Devices to Dose-Enhanced Low-Energy Radiation , 1986, IEEE Transactions on Nuclear Science.

[5]  Daniel M. Fleetwood,et al.  Effect of post-oxidation anneal temperature on radiation-induced charge trapping in metal-oxide-semiconductor devices , 1988 .

[6]  R. L. Pease,et al.  Plastic packaging and burn-in effects on ionizing dose response in CMOS microcircuits , 1995 .

[7]  E. H. Nicollian,et al.  Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .

[8]  G. L. Hash,et al.  Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs , 2000 .

[9]  R. L. Pease,et al.  Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits , 1997 .

[10]  P. M. Lenahan,et al.  Microstructural Variations in Radiation Hard and Soft Oxides Observed through Electron Spin Resonance , 1983, IEEE Transactions on Nuclear Science.

[11]  M. Tsukiji,et al.  Mechanical Stress Dependence of Radiation Effects in MOS Structures , 1986, IEEE Transactions on Nuclear Science.

[12]  D. Fleetwood,et al.  An overview of radiation effects on electronics in the space telecommunications environment , 2000 .

[13]  D. Fleetwood,et al.  Microscopic nature of border traps in MOS oxides , 1994 .

[14]  Daniel M. Fleetwood,et al.  Effects of burn-in on radiation hardness , 1994 .

[15]  Marty R. Shaneyfelt,et al.  Hardness variability in commercial technologies , 1994 .

[16]  Daniel M. Fleetwood,et al.  Effects of reliability screens on MOS charge trapping , 1995 .

[17]  P. S. Winokur,et al.  Correlating the Radiation Response of MOS Capacitors and Transistors , 1984, IEEE Transactions on Nuclear Science.

[18]  Marty R. Shaneyfelt,et al.  Use of COTS microelectronics in radiation environments , 1999 .

[19]  R. Pease Total-dose issues for microelectronics in space systems , 1996 .

[20]  Brower Kl,et al.  Kinetics of H2 passivation of Pb centers at the (111) Si-SiO2 interface. , 1988 .

[21]  K. L. Brower Kinetics of H/sub 2/ passivation of P/sub b/ centers at the (111) Si-SiO/sub 2/ interface , 1988 .

[22]  Daniel M. Fleetwood,et al.  Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxides , 1988 .