Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes
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Olivier Jambois | Yonder Berencén | B. Garrido | Lorenzo Pavesi | Joan Manel Ramirez | D. Navarro-Urrios | A. Anopchenko | N. Prtljaga | A. Tengattini | F. Milesi | J. Colonna | J. Fédéli | D. Navarro‐Urrios | Lorenzo Pavesi | B. Garrido | N. Prtljaga | A. Anopchenko | Y. Berencén | J. Ramírez | O. Jambois | F. Milési | A. Tengattini | A. Marconi | J.-P. Colonna | J. M. Fedeli | A. Marconi
[1] J. Barreto,et al. Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition , 2006 .
[2] R. Carius,et al. Hot electron impact excitation cross-section of Er3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes , 1997 .
[3] R. Walters,et al. Field-effect electroluminescence in silicon nanocrystals , 2005, Nature materials.
[4] F. Priolo,et al. Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices , 2006 .
[5] Design and Electro-Optical Characterization of Si-Based Resonant Cavity Light Emitting Devices , 2011 .
[6] P. Pellegrino,et al. Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er , 2012, Journal of Physics D: Applied Physics.
[7] Maria Eloisa Castagna,et al. Si-based materials and devices for light emission in silicon , 2003 .
[8] Donor activity of ion-implanted erbium in silicon , 1997 .
[9] H. Atwater,et al. Achieving optical gain in waveguide-confined nanocluster-sensitized erbium by pulsed excitation , 2010 .
[10] Anthony J. Kenyon,et al. Current Transport and Electroluminescence Mechanisms in Thin SiO2 Films Containing Si Nanoclusters-Sensitized Er Ion , 2009 .
[11] G. Franzò,et al. The excitation mechanism of rare-earth ions in silicon nanocrystals , 1999 .
[12] Olivier Jambois,et al. Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 m , 2012 .
[13] O Jambois,et al. Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters. , 2010, Optics express.
[14] J. Colonna,et al. Erbium implanted silicon rich oxide thin films suitable for slot waveguides applications , 2011 .
[15] M. Zacharias,et al. Si nanocrystal based memories: Effect of the nanocrystal density , 2006 .
[16] Takashi Sekiguchi,et al. Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique , 2010 .
[17] Fabrice Gourbilleau,et al. Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters , 2007 .
[18] Wolfgang Skorupa,et al. Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals , 2005 .
[19] N. Daldosso,et al. Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples , 2010 .
[20] M. Henker,et al. Direct tunneling effective mass of electrons determined by intrinsic charge-up process , 2007 .
[21] Maria Miritello,et al. Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices , 2002 .
[22] Markus Pollnau,et al. Erbium‐doped integrated waveguide amplifiers and lasers , 2011 .
[23] Thomas Dekorsy,et al. On the mechanism of electroluminescence excitation in Er-doped SiO2 containing silicon nanoclusters , 2005 .
[24] Reversing the temperature dependence of the sensitized Er3+ luminescence intensity , 2009 .
[25] M. Perego,et al. The energy band alignment of Si nanocrystals in SiO2 , 2011 .