MgNiO-based metal–semiconductor– metal ultraviolet photodetector

In this study, we report the growth of MgxNi1?xO thin films on quartz substrates by electron beam evaporation. The absorption edge shows a blue shift from 340?nm to 260?nm with increase in the Mg content from 0.2 to 0.8. A metal?semiconductor?metal structured photodetector is fabricated from the Mg0.2Ni0.8O film. At a bias of 5?V, the dark current of the photodetector is about 70?nA. The maximum responsivity is about 147.3??A?W?1 at 320?nm. In addition, the ultraviolet (UV) (320?nm) to visible (400?nm) rejection ratio is nearly two orders of magnitude. Based on these results, it is proposed that MgxNi1?xO is a potential candidate for application in UV photodetectors.

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