Design of a CMOS BDJ detector array for fluorescence imaging application

The Buried Double Junction (BDJ) detector [1], which can be used either as a wavelength-sensitive device and as a photodetector, can be implemented in standard CMOS IC technologies, with no requirement for additional post process step. It has recently been applied to fluorescence detection [2]. The wavelength-sensitive operation of the CMOS BDJ detector is based on the wavelength dependence of the Silicon absorption coefficient a(X) in the visible range. An absorption length defined as 1(X) varies monotonically, from about 0. 1pm to several micrometers when the wavelength of an incident monochromatic light changes from 0.4 jim to 0.8 jim.

[1]  G. Sou,et al.  A CMOS op amp using a regulated-cascode transimpedance building block for high-gain, low-voltage achievement , 1997, Proceedings of 1997 IEEE International Symposium on Circuits and Systems. Circuits and Systems in the Information Age ISCAS '97.

[2]  Gerard Sou,et al.  Colour detection using a buried double p-n junction structure implemented in the CMOS process , 1996 .

[3]  G. Sou,et al.  Investigation of CMOS BDJ detector for fluorescence detection in microarray analysis , 2000, 1st Annual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine and Biology. Proceedings (Cat. No.00EX451).