Fully differential dual-band image reject receiver in SiGe BiCMOS

A fully differential, dual-band, image reject receiver chip is described. SiGe BiCMOS (ft=45 GHz) enables high dynamic range with NF=2.8/4.1 dB (900 MHz/1.8 GHz) including requisite balun loss, IIP3 >-17 dBm, Gp=22 dB, and image rejection >40 dB at 2.7V (87mW).

[1]  W.R. Eisenstadr,et al.  Common and differential crosstalk characterization on the silicon substrate , 1999, IEEE Microwave and Guided Wave Letters.

[2]  B. Razavi,et al.  A 900 MHz/1.8 GHz CMOS receiver for dual band applications , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).

[3]  J. Cressler.  SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications , 1998 .

[4]  J. L. Tham,et al.  A 2.7 V 900 MHz/1.9 GHz dual-band transceiver IC for digital wireless communication , 1998, Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No.98CH36143).