Light-dependent I–V characteristics of TiO2/CdTe heterojunction solar cells

A new approach was proposed for the analysis of light current?voltage (I?V) characteristics of nonideal heterjunctions in the case of the dominating current transport mechanisms induced by multistep tunnel-recombination processes via interface states. I?V characteristics of the anisotype abrupt heterojunction n-TiO2/p-CdTe were investigated under different light conditions. The values of the series Rs?and shunt Rsh?resistance, as well as those of the coefficients ? and B, which quantitatively describe the dominating tunnel-recombination current transport mechanism, were established to be strongly dependent on light conditions.

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