Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber

We report on the behavior of an erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well semiconductor saturable absorber. The fiber is moderately doped in erbium ions. The saturable absorber consists of 40 periods of InGaAs (8.5 nm)/InP (10 nm) grown on an InP substrate. The laser efficiency is nonlinear under Q-switch regime and unusual temporal pulse shapes with rising times lower than decay times are observed around threshold. Pulse duration is around the microsecond range. Simple arguments based on a rate-equations approach are proposed in order to explain our results. They are justified a posteriori via numerical integration of the equations. The variation of threshold level versus spectroscopic parameters has been determined and that makes a guideline for generalizing our discussion.

[1]  J. Zayhowski,et al.  Optimization of Q-switched lasers , 1991 .

[2]  A. Gavrielides,et al.  Pulse train characterisitcs of a passively Q-switched microchip laser. , 1999 .

[3]  M. Tilsch,et al.  Semiconductor saturable absorber mirrors supporting sub-10-fs pulses , 1997 .

[4]  Glorieux,et al.  Antiphase dynamics and polarization effects in the Nd-doped fiber laser. , 1992, Physical review. A, Atomic, molecular, and optical physics.

[5]  P. Peterson,et al.  The pulse shape of a passively Q-switched microchip laser , 2000 .

[6]  Liguo Luo,et al.  Passive Q-switched erbium-doped fibre laser with saturable absorber , 1999 .

[7]  Dynamics of a vectorial neodymium-doped fibre laser passively Q switched by a polymer-based saturable absorber , 2004 .

[8]  Shaojun Zhang,et al.  Optimization of Cr/sup 4+/-doped saturable-absorber Q-switched lasers , 1997 .

[9]  R. Beach,et al.  New formalism for the analysis of passively Q-switched laser systems , 2001 .

[10]  J. J. Degnan,et al.  Theory of the optimally coupled Q-switched laser , 1989 .

[11]  Walter Koechner,et al.  Solid-State Laser Engineering , 1976 .

[12]  Erich P. Ippen,et al.  High fluence ultrafast dynamics of semiconductor saturable absorber mirrors , 1999 .

[13]  D. Miller,et al.  Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber. , 1992, Optics letters.

[14]  Rüdiger Paschotta,et al.  Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers , 2001 .

[15]  L. Erickson,et al.  Effects of Saturable Absorber Lifetime on the Performance of Giant‐Pulse Lasers , 1966 .

[16]  F. Kärtner,et al.  Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers , 1996 .

[17]  F. Mollot,et al.  Two-photon absorption in InP substrates in the 1.55μm range , 2004 .

[18]  D. Tang,et al.  Passively Q-switched Yb:YAG laser with a GaAs output coupler , 2002 .

[19]  A. Gaeta,et al.  Q switching of a diode-pumped Nd:YAG laser with GaAs. , 1996, Optics letters.

[20]  G. Lim,et al.  Amplified-spontaneous-emission effects in a passively Q -switched diode-pumped Nd:YVO 4 laser , 2004 .

[21]  B. Justus,et al.  Z-scan studies of nonlinear absorption and refraction in bulk, undoped InP , 1995 .

[22]  Ursula Keller,et al.  Optical characterization of semiconductor saturable absorbers , 2004 .

[23]  U. Keller,et al.  Design and operation of antiresonant Fabry–Perot saturable semiconductor absorbers for mode-locked solid-state lasers , 1995 .

[24]  Y. Lan,et al.  Analytical model for design criteria of passively Q-switched lasers , 2001 .

[25]  A. Hideur,et al.  HIGHLY FE-DOPED InGaAs/InP SATURABLE ABSORBER MODE-LOCKING OF AN ERBIUM FIBER LASER , 2005 .

[26]  J. Allain,et al.  Dynamics of the transient buildup of emission in Nd/sup 3+/-doped fiber lasers , 1991 .

[27]  Rüdiger Paschotta,et al.  Passively Q-switched microchip laser at 1.5 µm , 2001 .

[28]  A. Starodumov,et al.  Cw-pumped erbium-doped fiber laser passively Q switched with Co 2+ :ZnSe crystal: modeling and experimental study , 2002 .

[29]  David J. Richardson,et al.  Passively Q-switched 0.1mJ fiber laser system at 1.53µm , 1999 .

[30]  Alexander L. Gaeta,et al.  Intra-cavity frequency-doubling of a Nd:YAG laser passively Q-switched with GaAs , 1997 .

[31]  A. Szabo,et al.  Theory of Laser Giant Pulsing by a Saturable Absorber , 1965 .

[32]  Ian W. Boyd,et al.  Optical limiting in GaAs , 1985 .

[33]  T. Sajavaara,et al.  Broadband semiconductor saturable absorber mirrors in the 1.55-/spl mu/m wavelength range for pulse generation in fiber lasers , 2002 .

[34]  Rüdiger Paschotta,et al.  Q-switching stability limits of continuous-wave passive mode locking , 1999 .

[35]  U. Keller,et al.  Control of solid state laser dynamics by semiconductor devices , 1995 .

[36]  Michael Bass,et al.  A generalized model for passively Q-switched lasers including excited state absorption in the saturable absorber , 1997 .

[37]  J. J. Degnan,et al.  Optimization of passively Q-switched lasers , 1995 .

[38]  Stephan,et al.  General analysis of instabilities in erbium-doped fiber lasers. , 1996, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

[39]  H. Haus.  Parameter ranges for CW passive mode locking , 1976 .