Measurement of electrical parameters and trace impurity effects in MOS capacitors

A wide ranging review and development of MOS capacitor electrical measurements is presented. Advances are reported in the high frequency CV method, pulsed CV measurements, the determination of interface state densities and calculation of the minority carrier generation lifetime. A software package called EDUCATES (Edinburgh University Capacitor Test Software) has been written. This provides a comprehensive analysis of the MOS capacitor using accurate measurements implemented in a totally automated manner. EDUCATES was used to investigate the electrical effects of trace levels of metal ions presen 'hydrofluoric acid which is used for pre-gate oxidation cleaning. It was found that there were no significant effects for concentrations of up to 5 p.p.m. Calcium, Chromium, Cobalt, Lead and Nickel although increases in the fixed and mobile charge densities were observed in iron contaminated oxide.

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