Strain Enhanced nMOS Using In Situ Doped Embedded $\hbox{Si}_{1 - x}\hbox{C}_{x}$ S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process
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H. Bender | S. Biesemans | D. Shamiryan | C. Kerner | T. Hoffmann | P. Verheyen | P. Absil | F. Clemente | V. Machkaoutsan | R. Loo | H. Bender | R. Loo | T. Hoffmann | P. Verheyen | P. Absil | S. Biesemans | F. Clemente | C. Kerner | D. Shamiryan | D. Weeks | M. Bauer | S. Thomas | M. Bauer | D. Weeks | S.G. Thomas | V. Machkaoutsan
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