A 2.5 V 256-level non-volatile analog storage device using EEPROM technology

This integrated circuit stores 256 analog voltage levels in high density, non-volatile memory with /spl sim/7.5m V resolution per level. By contrast, the multilevel storage capacity of a typical digital non-volatile memory is 4-level per cell. The integrated circuit operates over a voltage range of 2.5 V to 5.5 V. Previous analog storage implementation use a 5.0 V supply for /spl sim/12 mV equivalent resolution per level in a 128 k EEPROM.

[1]  Ranjeet Alexis,et al.  A multilevel-cell 32 Mb flash memory , 1995, Proceedings ISSCC '95 - International Solid-State Circuits Conference.

[2]  Trevor Blyth,et al.  A Non-volatile Analog Storage Device Using EEPROM Technology , 1991, 1991 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.