A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility

In this paper, a physical model for a SiC Junction Field Effect Transistor (JFET) is presented. The novel feature of the model is that the mobility dependence on both temperature and electric field is taken into account. This is particularly important for high-current power devices where the maximum conduction current is limited by drift velocity saturation in the channel. The model equations are described in detail, emphasizing the differences introduced by the field-dependent mobility model. The model is then implemented in Pspice. Both static and dynamic simulation results are given. The results are validated with experimental results under static conditions and under resistive and inductive switching conditions.

[1]  W. Shockley,et al.  A Unipolar "Field-Effect" Transistor , 1952, Proceedings of the IRE.

[2]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[3]  P. D. Taylor,et al.  Modern Power Devices , 1988 .

[4]  Paolo Antognetti,et al.  Semiconductor Device Modeling with Spice , 1988 .

[5]  P. Van Kalen.  A physical SPICE-compatible dual-gate JFET model , 1990 .

[6]  B. J. Baliga,et al.  Analysis of silicon carbide power device performance , 1991, [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.

[7]  C. C. McAndrew,et al.  A 3-terminal model for diffused and ion-implanted resistors , 1997 .

[8]  James A. Cooper,et al.  Measurement of High Field Electron Transport in Silicon Carbide , 1997 .

[9]  Tsunenobu Kimoto,et al.  Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition , 2001 .

[10]  Michael S. Mazzola,et al.  Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits , 2004 .

[11]  H. Mantooth,et al.  Modeling vertical channel junction field effect devices in silicon carbide , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

[12]  C. C. McAndrew,et al.  R3, an Accurate JFET and 3-Terminal Diffused Resistor Model , 2004 .

[13]  T. Funaki,et al.  Compact circuit simulation model of silicon carbide static induction and junction field effect transistors , 2004, 2004 IEEE Workshop on Computers in Power Electronics, 2004. Proceedings..

[14]  R. K. Malhan,et al.  Normally-off Trench JFET Technology in Silicon Carbide (特集 電子デバイス) , 2005 .

[15]  P. Friedrichs,et al.  Silicon carbide power devices - current developments and potential applications , 2005, 2005 European Conference on Power Electronics and Applications.

[16]  10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors , 2006 .

[17]  Hao Ding,et al.  A new model for four-terminal junction field-effect transistors , 2006 .

[18]  Jian H. Zhao,et al.  Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs , 2006 .

[19]  Jae Bin Lee,et al.  4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates , 2007 .

[20]  R. Singh,et al.  Commercial impact of silicon carbide , 2008, IEEE Industrial Electronics Magazine.

[21]  H. Morel,et al.  Modeling and high temperature characterization of SiC-JFET , 2008, 2008 IEEE Power Electronics Specialists Conference.

[22]  E. Santi,et al.  Parameter extraction procedure for high power SiC JFET , 2009, 2009 IEEE Energy Conversion Congress and Exposition.