III-nitride growth and characteristics on ferroelectric materials using plasma-assisted molecular beam epitaxy

The characteristics and growth of III-nitride materials on ferroelectric lithium niobate with varying Li mole composition have been investigated to achieve a better device performance of AlGaN∕GaN heterojunction structures. III-nitride growth on lithium niobate has been performed after high temperature (1000°C) furnace thermal treatments in dry air environment resulting in atomically flat surfaces on lithium niobate (LN). However, while this furnace thermal treatment results in improved surface smoothness and III-nitride adhesion, it also causes repolarization, ferroelectric domain reversal from a +z spontaneous polarization to a −z spontaneous polarization in the surface of congruent LN (48.39mole% of Li2O). On the other hand, near-stoichiometric LN (49.9mole% of Li2O) did not develop repolarization during the identical thermal treatment. Furthermore, as determined in situ by spectroscopic ellipsometry, congruent LN (CLN) shows a bigger variation of the pseudorefractive index and pseudoextinction coeffic...

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