The excellent scalability of the RCAT (recess-channel-array-transistor) technology for sub-70nm DRAM feature size and beyond

The technology innovation for extending the RCAT structure to the sub-70nm DRAM is presented. The new technology overcomes the problems induced by shrinkage of the RCAT structure and meets the requirements for the next generation DRAMs, such as high speed and low power performance. The technology roadmap down to the 50nm DRAM feature size of the RCAT development is presented.