Device Structure and Simulations of 4H-SiC TPJBS Diode

The conventional 4H-SiC JBS device has a few disadvantages:high on-state voltage drop,leakage current and static power dissipation.In order to explore the theory method and technology measure to improve these disadvan-tages,a novel 4H-SiC JBS device structure with trenched P+ anode(4H-SiC TPJBS) is proposed.Forward on-state char-acteristics and reverse block characteristics of the proposed 4H-SiC TPJBS are simulated with Silvaco TCAD.Simula-tion results indicate that the proposed 4H-SiC TPJBS is featured of lower on-state voltage drop,leakage current and static power dissipation than the conventional 4H-SiC JBS device.