Simple and Accurate Models for Capacitance Increment due to Metal Fill Insertion
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[1] G. Nanz,et al. Modeling of chemical-mechanical polishing: a review , 1995 .
[2] Keun-Ho Lee,et al. Analyzing the effects of floating dummy-fills: from feature scale analysis to full-chip RC extraction , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[3] D. Boning,et al. An integrated characterization and modeling methodology for CMP dielectric planarization , 1998, Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
[4] Qing Su,et al. A min-variance iterative method for fast smart dummy feature density assignment in chemical-mechanical polishing , 2005, Sixth international symposium on quality electronic design (isqed'05).
[5] Andrew B. Kahng,et al. Manufacturing-aware physical design , 2003, ICCAD-2003. International Conference on Computer Aided Design (IEEE Cat. No.03CH37486).
[6] Andrew B. Kahng,et al. Area fill synthesis for uniform layout density , 2002, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[7] Andrew B. Kahng,et al. Compressible area fill synthesis , 2005, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[8] Puneet Gupta,et al. Performance-impact limited area fill synthesis , 2003, DAC '03.
[9] Ruiqi Tian,et al. Reticle enhancement technology: implications and challenges for physical design , 2001, Proceedings of the 38th Design Automation Conference (IEEE Cat. No.01CH37232).
[10] Keun-Ho Lee,et al. An exhaustive method for characterizing the interconnect capacitance considering the floating dummy-fills by employing an efficient field solving algorithm , 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).
[11] Duane S. Boning,et al. A CLOSED-FORM ANALYTIC MODEL FOR ILD THICKNESS VARIATION IN CMP PROCESSES , 1997 .
[12] Martin D. F. Wong,et al. Dummy-feature placement for chemical-mechanical polishinguniformity in a shallow-trench isolation process , 2002, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[13] Martin D. F. Wong,et al. Model-based dummy feature placement for oxide chemical-mechanical polishing manufacturability , 2000, DAC.
[14] Atsushi Kurokawa,et al. Efficient capacitance extraction method for interconnects with dummy fills , 2004, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571).
[15] A. Dengi,et al. A two-dimensional low pass filter model for die-level topography variation resulting from chemical mechanical polishing of ILD films , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
[16] Atsushi Kurokawa,et al. Dummy filling methods for reducing interconnect capacitance and number of fills , 2005, Sixth international symposium on quality electronic design (isqed'05).
[17] D. Boning,et al. The physical and electrical effects of metal-fill patterning practices for oxide chemical-mechanical polishing processes , 1998 .
[18] S W Haley. The first encounter. , 1986, Nursing homes.
[19] Martin D. F. Wong,et al. Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process , 2001, ISPD '01.
[20] Keun-Ho Lee,et al. Investigation of the capacitance deviation due to metal-fills and the effective interconnect geometry modeling , 2003, Fourth International Symposium on Quality Electronic Design, 2003. Proceedings..
[21] Andrew B. Kahng,et al. Filling algorithms and analyses for layout density control , 1999, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..