18.3: Low Power 3.4inch Quarter High Definition OLED Display Using InGaZnOxide TFTs and White Tandem OLED
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Yoshiaki Oikawa | Hiroyuki Miyake | Jun Koyama | Shunpei Yamazaki | Miyuki Sasaki | Hiroki Ohara | Hideaki Shishido | Hiromi Nowatari | Masayuki Sakakura | Takahiro Ushikubo | Satoshi Seo | Hotaka Maruyama | J. Koyama | S. Yamazaki | Hiromi Nowatari | Satoshi Seo | M. Sakakura | H. Ohara | Miyuki Sasaki | H. Shishido | H. Miyake | Y. Oikawa | T. Ushikubo | Hotaka Maruyama
[1] Masaki Nakamura,et al. Modulated Structures of Homologous Compounds InMO3(ZnO)m(M=In, Ga;m=Integer) Described by Four-Dimensional Superspace Group , 1998 .
[2] H. Ohta,et al. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor , 2003, Science.
[3] H. Ohta,et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.
[4] Masaki Nakamura,et al. The phase relations in the In2O3Ga2ZnO4ZnO system at 1350°C , 1991 .
[5] Noboru Kimizuka,et al. Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C , 1985 .
[6] Masashi Tsubuku,et al. 15.2: Development of Driver‐Integrated Panel Using Amorphous In‐Ga‐Zn‐Oxide TFT , 2009 .
[7] Stephen R. Forrest,et al. White Stacked Electrophosphorescent Organic Light‐Emitting Devices Employing MoO3 as a Charge‐Generation Layer , 2006 .