A backside-illuminated imaging AlGaAs/GaAs charge-coupled device

A glass‐supported, backside‐illuminated AlGaAs/GaAs heterojunction charge‐coupled device (CCD) imager is reported. The CCD structure was grown by liquid phase epitaxy on a GaAs substrate. The top epi‐layer was bonded to glass and the GaAs substrate completely removed. A ten‐pixel three‐phase Schottky gate CCD was fabricated on the glass‐supported layer. The CCD was successfully operated as a line imager with the photosignal entering through the support glass.