Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques

An introduction to the methodology, design concepts, fabrication routes and potential applications is presented of research to fabricate quantum devices on a complementary metal oxide semiconductor (CMOS) fabrication line. Si/Si1−xGex heterostructure field effect transistors, velocity modulation transistors and resonant tunnelling diodes are considered and initial fabrication stages discussed.

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