Photoenhanced electroluminescence in amorphous silicon p-i-n junctions

Abstract We report a novel effect in a-Si p-i-n junctions, in which photoenhancement of the electroluminescence efficiency (ηEL) occurs under illumination and forward bias. In the limit of high illumination (or large photocurrents, i ph), the EL intensity varies linearly with i ph, with a quantum efficiency four to eight times larger than for dark currents. Some possible models are discussed.