论文信息 - Non-quasi-static charge injection modeling in analog MOS switches

Non-quasi-static charge injection modeling in analog MOS switches

In this paper, we present a simplified, design-oriented model for the transient behaviour of a short-channel MOS transistor operating in the non- quasi static regime. The proposed formulation is dedicated to model the charge injection effects in MOS analog switches at high operating speed. The model has been implemented in MATLAB: it is shown that the results are in good accordance with other, more complex models. .

Maurizio Valle | Alberto Dei

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