A 512kb cross-point cell MRAM

A 512kb MRAM comprising cross-point cells, magnetic tunnel junctions, bit lines and word lines is designed using a 0.25/spl mu/m CMOS and a 0.6/spl mu/m MRAM process. The design provides a new sensing method without a large area overhead despite a low current cross-point signal. The MRAM operates with read access time of 1.0/spl mu/s at 2.5V.

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