Time- and space-resolved dynamics of melting, ablation, and solidification phenomena induced by femtosecond laser pulses in germanium

This work has been partially supported by the TEC 2005- 00074 project and by the EU in the frame of the TMR project FLASH MRTN-CT-2003-503641 . J.B. acknowledges the funding of the C.S.I.C. through a contract in the frame of the I3P Programme Ref. I3P-PC2002 .

[1]  A. Tünnermann,et al.  Plasma evolution during metal ablation with ultrashort laser pulses. , 2005, Optics express.

[2]  Wood,et al.  Time-resolved reflectivity measurements on silicon and germanium using a pulsed excimer KrF laser heating beam. , 1986, Physical review. B, Condensed matter.

[3]  H. Sturm,et al.  Scanning force microscopic investigations of the femtosecond laser pulse irradiation of indium phosphide in air , 2004, IEEE Transactions on Nanotechnology.

[4]  A. A. Studna,et al.  Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimeters. , 1978, The Review of scientific instruments.

[5]  W. Sooy,et al.  SWITCHING OF SEMICONDUCTOR REFLECTIVITY BY A GIANT PULSE LASER , 1964 .

[6]  R. Yen,et al.  Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in Silicon , 1983 .

[7]  J. C. Matter,et al.  Ultrafast transient response of solid-state plasmas. I. Germanium, theory, and experiment , 1977 .

[8]  Sergei I. Anisimov,et al.  Pulsed laser evaporation: equation-of-state effects , 1999 .

[9]  Klaus Sokolowski-Tinten,et al.  Transient States of Matter during Short Pulse Laser Ablation , 1998 .

[10]  J. Siegel,et al.  Pressure-induced transient structural change of liquid germanium induced by high-energy picosecond laser pulses , 2005 .

[11]  Surface tension measurement technique by differential phase detection of capillary waves in liquids , 2000 .

[12]  J. Bokor,et al.  Rapid melting and regrowth velocities in silicon heated by ultraviolet picosecond laser pulses , 1984 .

[13]  Stampfli,et al.  Theory for the instability of the diamond structure of Si, Ge, and C induced by a dense electron-hole plasma. , 1990, Physical review. B, Condensed matter.

[14]  Gerald Earle Jellison,et al.  Measurements of the optical properties of liquid silicon and germanium using nanosecond time-resolved ellipsometry , 1987 .

[15]  Michael C. Downer,et al.  Femtosecond imaging of melting and evaporation at a photoexcited silicon surface , 1985 .

[16]  R. Yen,et al.  Picosecond laser‐induced melting and resolidification morphology on Si , 1979 .

[17]  S. Wiggins,et al.  Ultrafast phase transitions after femtosecond laser irradiation of indium phosphide , 2004 .

[18]  M. Allmen.  Laser-beam interactions with materials , 1987 .

[19]  Klaus Sokolowski-Tinten,et al.  Thermal and nonthermal melting of gallium arsenide after femtosecond laser excitation , 1998 .

[20]  Vassili Temnov,et al.  Dynamics of ultrashort pulse-laser ablation: equation-of-state considerations , 2002, SPIE High-Power Laser Ablation.

[21]  N. G. Chew,et al.  Amorphization of germanium, gallium phosphide, and gallium arsenide by laser quenching from the melt , 1983 .

[22]  S. Wiggins,et al.  Dynamics of femtosecond laser-induced melting and amorphization of indium phosphide , 2004 .

[23]  REVIEW ARTICLE: Transient annealing of semiconductors by laser, electron beam and radiant heating techniques , 1985 .

[24]  J. L. Escudero,et al.  Optical properties of laser-deposited a-Ge films: a comparison with sputtered and e-beam-deposited films. , 1992, Applied optics.

[25]  T. Venkatesan,et al.  Dynamics of Q‐switched laser annealing , 1979 .

[26]  S. Wiggins,et al.  Dynamics of phase transitions induced by femtosecond laser pulse irradiation of indium phosphide , 2005 .

[27]  P. Leiderer,et al.  Optical reflectivity of Si above the melting point , 1992 .

[28]  Klaus Sokolowski-Tinten,et al.  The physical mechanisms of short-pulse laser ablation , 2000 .

[29]  Taketoshi Hibiya,et al.  Thermophysical properties data on molten semiconductors , 1992 .

[30]  John Nees,et al.  Femtosecond-laser-induced delamination and blister formation in thermal oxide films on silicon (100) , 2006 .

[31]  E. Irene,et al.  Spectroscopic ellipsometric measurements of the dielectric function of germanium dioxide films on crystal germanium , 1992 .

[32]  Katsunobu Nishihara,et al.  Molecular-dynamics simulation of rarefaction waves in media that can undergo phase transitions , 2000 .

[33]  Young,et al.  Correlation of hot-phonon and hot-carrier kinetics in Ge on a picosecond time scale. , 1991, Physical review. B, Condensed matter.

[34]  Alfred J. Meixner,et al.  Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy , 2004 .

[35]  K R Wilson,et al.  Detection of nonthermal melting by ultrafast X-ray diffraction. , 1999, Science.

[36]  K. Sokolowski-Tinten,et al.  Single-pulse time- and fluence-resolved optical measurements at femtosecond excited surfaces , 1999 .

[37]  J. Siegel,et al.  Reflectivity of crystalline Ge and Si at the melting temperature measured in real time with subnanosecond temporal resolution , 2001 .

[38]  J. Siegel,et al.  Real-time optical measurements with picosecond resolution during laser induced transformations , 2000 .

[39]  Shumay,et al.  Phase transformations of an InSb surface induced by strong femtosecond laser pulses. , 1996, Physical review. B, Condensed matter.