Charge control studies for an AlInN/InN heterojunction field effect transistor without and with oxide layer

This paper describes a novel AlInN/InN heterojunction field effect transistor (HFET) without and with an oxide layer for high performance. A charge control model based on the self-consistent solution of one dimensional Schrodinger-Poisson equations is developed. The model takes into account the highly dominant spontaneous and piezoelectric polarization effects to predict the two dimensional electron gas (2DEG) sheet density more accurately at the heterointerface. The band profile is calculated for the first two sub band energy for In mole fraction of m = 0.1. A large conduction band offset of about 2.77eV is found, which ensure the better confinement and higher sheet charge density. An extremely high two dimensional electron sheet density of 1.21×1014 cm−2 is calculated at the hetero interface for In content of 0.1, while those using an oxide layer beneath the gate the 2DEG changes to be 1.99×1014 cm−2. It is increased by almost one order of magnitude as compared to ∼1×1013 cm−2 obtained in a conventional GaN-based heterostructure. This analysis is expected to provide powerful means to evaluate the performance of AlInN/InN heterostructure field effect transistors and to optimize their design.

[1]  J. H. Blokland,et al.  Carrier mass measurements in degenerate indium nitride , 2009 .

[2]  Kuang-I Lin,et al.  Drift current dominated terahertz radiation from InN at low-density excitation , 2008 .

[3]  R. Gupta,et al.  Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications , 2008 .

[4]  A. Fox,et al.  Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs , 2006, IEEE Transactions on Electron Devices.

[5]  S. Gwo,et al.  Direct evidence of 8: 9 commensurate heterojunction formed between InN and AlN on c plane , 2005 .

[6]  C. Poweleit,et al.  Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy , 2005 .

[7]  Yoshiki Saito,et al.  Optical Properties of InxGa1—xN with Entire Alloy Composition on InN Buffer Layer Grown by RF‐MBE , 2002 .

[8]  Eugene E. Haller,et al.  Unusual properties of the fundamental band gap of InN , 2002 .

[9]  Abhinav Kranti,et al.  An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs , 2002 .

[10]  Akio Yamamoto,et al.  Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1) , 2002 .

[11]  Jacek A. Majewski,et al.  Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures , 2002 .

[12]  A. Di Carlo,et al.  Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs , 2001 .

[13]  Michael S. Shur,et al.  AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates , 2000 .

[14]  Naoki Kobayashi,et al.  Superior Pinch-Off Characteristics at 400°C in AlGaN/GaN Heterostructure Field Effect Transistors , 1999 .

[15]  K. Brennan,et al.  Ensemble Monte Carlo study of electron transport in wurtzite InN , 1999 .

[16]  D. Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997, cond-mat/9705105.

[17]  P. Wachter,et al.  Optical Properties of GdS,GdSe,GdTeamd LaS , 1974 .

[18]  N. Clark,et al.  Direct Evidence , 1934 .

[19]  A. Yamamoto,et al.  Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization , 2008 .

[20]  W. Eccleston,et al.  Mater. Res. Soc. Symp. Proc. , 2006 .

[21]  M. Khan,et al.  GaN-Al x Ga 1−x N Heterostructures Deposition by Low Pressure Metalorganic Chemical Vapor Deposition for Metal Insulator Semiconductor Field Effect Transistor (Misfet) Devices , 1992 .

[22]  H. J. Hagger,et al.  Solid State Electronics , 1960, Nature.