Frequency-Modulated Charge Pumping With Extremely High Gate Leakage
暂无分享,去创建一个
Ru Huang | Jibin Zou | Anthony S. Oates | Kin P. Cheung | Richard Southwick | Jason Paul Campbell | Jason Thomas Ryan
[1] G. Bersuker,et al. Spatial Distributions of Trapping Centers in $ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack , 2007, IEEE Transactions on Electron Devices.
[2] J. Suehle. Exploring the Capability of Multifrequency Charge Pumping in Resolving Location and Energy Levels of Traps Within Dielectric , 2008 .
[3] K. P. Cheung,et al. Reliability monitoring for highly leaky devices , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).
[4] Andrew R. Brown,et al. RTS amplitudes in decananometer MOSFETs: 3-D simulation study , 2003 .
[5] Gennadi Bersuker,et al. Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks , 2006 .
[6] G. Groeseneken,et al. On the geometric component of charge-pumping current in MOSFETs , 1993, IEEE Electron Device Letters.
[7] A. S. Oates,et al. Frequency-Modulated Charge Pumping: Defect Measurements With High Gate Leakage , 2014 .
[8] J. Brugler,et al. Charge pumping in MOS devices , 1969 .
[9] S. Demuynck,et al. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits , 2006, 2006 International Electron Devices Meeting.
[10] J. Schmitz,et al. Charge Pumping at Radio Frequencies: Methodology, Trap Response and Application , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.
[11] On the Contribution of Bulk Defects on Charge Pumping Current , 2012, IEEE Transactions on Electron Devices.
[12] G. Groeseneken,et al. A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.
[13] A. Elliot,et al. The use of charge pumping currents to measure surface state densities in MOS transistors , 1976 .
[14] R. Degraeve,et al. Interface Trap Characterization of a 5.8-$\hbox{\rm{ \AA}}$ EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique , 2011, IEEE Transactions on Electron Devices.
[15] A. S. Oates,et al. Constant shape factor frequency modulated charge pumping (FMCP) , 2013, 2013 IEEE International Integrated Reliability Workshop Final Report.
[16] Guido Groeseneken,et al. Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors , 1991 .
[17] J. Brini,et al. On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs , 1999, IEEE Electron Device Letters.
[18] J. Suehle,et al. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states , 2011 .
[19] J. Schmitz,et al. Application and Evaluation of the RF Charge-Pumping Technique , 2008, IEEE Transactions on Electron Devices.
[20] K. Cheung,et al. Carrier capture at the SiO2-Si interface : A physical model , 2007 .