论文信息 - Inductively coupled plasma etching of GaN and its effect on electrical characteristics

Inductively coupled plasma etching of GaN and its effect on electrical characteristics

Dry etch behavior in the inductively coupled plasma processing of GaN using SF6/N2 plasma has been found to be highly ion induced with an ion energy threshold of about 100 eV. Temperature dependence of the etch rate indicates a small kinetic component. Maximum etch rate of 67 nm/min and good anisotropy have been demonstrated. The most efficient etch regime is observed for an ICP source power between 500–1000 W where the etch mechanism is ion limited. In contrast to reactive ion etching induced damage behavior, almost ideal diodes are obtained at the higher dc bias condition (300 V). X-ray photoelectron spectroscopy and atomic force microscopy studies indicate that smooth surface with minimal surface contamination, coupled with the incorporation of N on the substrate surface help to produce ideal diodes on surfaces etched at 300 V. Sidewall depletion is found to be in the range of 65 nm at the given SF6/N2 plasma process conditions.

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