A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions

Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfer-torque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for their capabilities and limitations. Furthermore, a Verilog-A model is developed to predict dynamic characteristics of the MTJ. These models are used in simulating a prototype circuit to illustrate their strengths and weaknesses.

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