Characterization of detector-grade CdZnTe crystals grown by traveling heater method (THM)

Abstract This work focuses on the 3. Resultsanddiscussioncharacterization of 10×10×10 mm 3 THM-grown CdZnTe detector-grade crystals that have been post-growth annealed to remove the secondary phases (SPs). All three detectors showed an average energy resolution of ∼1.63% for a small guarded pixel with 3.5 mm diameter, measured using 137 Cs—662 keV with an average peak-to-Compton ratio of 2.7. The characterization showed vestiges of SPs and micro-twins present in some of the crystals indicating that the SPs prior to annealing were large and had size in the range of 100–500 μm. The various detectable structural features, such as micron twins, strains and sub-micron level of Te inclusions seemed to have little or no influence in the radiation spectrometer performance of the detectors; this is possibly because they are either having low density or electrically inactive.