A novel self-aligned surface-silicide passivation technology for reliability enhancement in copper interconnects
暂无分享,去创建一个
By exposing the giant-grain Cu interconnects in SiH/sub 4/ ambient at 200/spl deg/C and annealing it in Ar ambient at 450/spl deg/C, we have succeeded in performing self-aligned surface-silicide passivation on the Cu interconnects. The surface-silicide passivated giant-grain Cu interconnect exhibits one order of magnitude longer lifetime against electromigration than the non-passivated giant-grain Cu interconnect.
[1] Tadashi Shibata,et al. Electrical Properties of Giant‐Grain Copper Thin Films Formed by a Low Kinetic Energy Particle Process , 1992 .
[2] J. Tao,et al. Electromigration characteristics of copper interconnects , 1993, IEEE Electron Device Letters.
[3] Tadashi Shibata,et al. Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly Developed Accelerated Life‐Test Method , 1993 .