Ion implantation in IV–VI semiconductors

[1]  R. Nicholas,et al.  Evidence for shallow bound states in PbTe , 1983 .

[2]  R. Kalish,et al.  Structure of ion‐implanted and annealed Hg1−xCdxTe , 1983 .

[3]  E. Zinner,et al.  Implantation of Mn In PbTe and synthesis of Pb1−xMnxTe , 1983 .

[4]  F. J. Bryant,et al.  Diode laser fabrication using proton bombardment of PbTe , 1983 .

[5]  K. Lischka Bound defect states in IV–VI semiconductors , 1982 .

[6]  G. Carter,et al.  Amorphisation of solids by ion implantation , 1982 .

[7]  E. Gornik,et al.  Physics of Narrow Gap Semiconductors , 1982 .

[8]  J. Pfister,et al.  Comment on ’’Cathodoluminescence studies of anomalous ion implantation defect introduction in ZnTe’’ , 1981 .

[9]  F. J. Bryant,et al.  Low-resistance, long-life contacts by laser-annealing of silver-implanted p-type PbTe , 1981 .

[10]  J. Donnelly The electrical characteristics of ion implanted compound semiconductors , 1981 .

[11]  D. Trbojevic,et al.  Photovoltaic detectors in SnS produced by Sb+ ion implantation , 1981 .

[12]  L. Palmetshofer,et al.  Ion‐implantation‐induced damage and resonant levels inPb1−xSnxTe , 1980 .

[13]  H. Preier Recent advances in lead-chalcogenide diode lasers , 1979 .

[14]  Y. Nemirovsky,et al.  Electrical properties of ion‐implanted layers in Hg0.79Cd0.21Te , 1979 .

[15]  A. S. Petrov,et al.  High temperature defects in electron irradiated semiconductors HgCdTe, PbSnTe , 1979 .

[16]  R. Kalish,et al.  Laser annealing of indium‐implanted Pb0.8Sn0.2Te films , 1979 .

[17]  A. Hurrle,et al.  Pb0.8Sn0.2Te Infrared photodiodes by indium implantation , 1978 .

[18]  H. Heinrich,et al.  Evaluation of doping profiles in ion‐implanted PbTe , 1978 .

[19]  A. Lopez‐Otero,et al.  Hot wall epitaxy , 1978 .

[20]  L. Eckertová Physics of thin films , 1977 .

[21]  R. F. Brebrick Analysis of the solidus lines for PbTe and SnTe , 1977 .

[22]  H. Heinrich,et al.  Ion-implantation-induced lattice defects in PbTe , 1977 .

[23]  B. A. Green Mobility changes in PbSnTe due to low‐temperature electron irradiation , 1976 .

[24]  G. Bauer,et al.  Impurity and vacancy states in PbTe , 1976 .

[25]  J. Donnelly,et al.  As + -ion implanted lead telluride p- n junction photodiodes , 1975 .

[26]  R. Leadon,et al.  MODEL FOR DEFECTS IN HgCdTe DUE TO ELECTRON IRRADIATION , 1975 .

[27]  A. Lopez‐Otero,et al.  Comparison of PbTe diodes fabricated by epitaxial growth and by ion implantation of epitaxial layers , 1975 .

[28]  K. Komatsubara,et al.  p‐n junction formation by Te+ ion implantation into solution‐grown Pb1−xSnxTe , 1975 .

[29]  L. A. Hemstreet Cluster calculations of the effects of lattice vacancies in PbTe and SnTe , 1975 .

[30]  L. A. Hemstreet Cluster calculations of the effects of single vacancies of the electronic properties of PbS , 1975 .

[31]  J. Donnelly,et al.  p-n junction PbS1-xSex photodiodes fabricated by Se+ ion implantation , 1975 .

[32]  M. Schlueter,et al.  ELECTRONIC CHARGE DENSITIES IN PbSe AND PbTe , 1974 .

[33]  毅一 小松原 G. Dearnaley, J. H. Freeman, R. S. Nelson and J. Stephen : Ion Implantation, North-Holland, Amsterdam and London, 1973, xv+802ページ, 23×16cm, 29,250円 (Series, Defects in Crystalline Solids, Vol. 8). , 1974 .

[34]  C. C. Wang,et al.  Proton bombardment and isochronal annealing of p‐type Pb0.76Sn0.24Te , 1974 .

[35]  H. Holloway,et al.  Photodiodes fabricated in epitaxial PbTe by Sb + ion implantation , 1973 .

[36]  A. J. Strauss,et al.  Effect of Pb- and Te-saturation on carrier concentrations in impurity-doped PbTe , 1973 .

[37]  J. Melngailis,et al.  Electron radiation damage and annealing of Hg1−xCdxTe at low temperatures , 1973 .

[38]  J. Donnelly,et al.  PbS photodiodes fabricated by Sb+ ion implantation , 1973 .

[39]  J. Donnelly,et al.  p‐n Junction Photodiodes in PbTe Prepared by Sb+ Ion Implantation , 1972 .

[40]  A. Calawa,et al.  Pb1−xSnxTe photovoltaic diodes and diode lasers produced by proton bombardment , 1972 .

[41]  C. C. Wang,et al.  Effect of Proton Bombardment on Pb0.76Sn0.24Te , 1972 .

[42]  N. J. Parada Localized Defects in PbTe , 1971 .

[43]  D. L. Mitchell,et al.  Magnetic Freeze-Out of Electrons in Extrinsic Semiconductors , 1969 .

[44]  G. Pratt,et al.  New Model for Vacancy States in PbTe , 1969 .

[45]  F. Wald,et al.  Massive heterovalent substitutions in octahedrally coordinated semiconductors , 1965 .

[46]  W. W. Scanlon,et al.  Mobility of Electrons and Holes in PbS, PbSe, and PbTe between Room Temperature and 4.2°K , 1958 .

[47]  F. J. Bryant,et al.  The electrical properties of pbte implanted with H+ As+ or Sn+ , 1982 .

[48]  M. Lannoo,et al.  Point Defects in Semiconductors II , 1981 .

[49]  R. Kalish,et al.  Damage and lattice location studies in Hg implanted Hg1–xCdxTe , 1980 .

[50]  K. Unger S. Rabii. Physics of IV‐VI Compounds and alloys. 253 Seiten, Preis £ 10, 00 Gordon and Breach, London, New York, Paris 1974 , 1976 .

[51]  Roger Kelly,et al.  Criteria for bombardment-induced structural changes in non-metallic solids , 1975 .

[52]  H. Preier,et al.  Lead Salt Laser Diodes , 1975 .

[53]  W. J. Johnson,et al.  n‐p junction ir detectors made by proton bombardment of epitaxial PbTe , 1972 .

[54]  J. Donnelly,et al.  n‐p JUNCTION PHOTOVOLTAIC DETECTORS IN PbTe PRODUCED BY PROTON BOMBARDMENT , 1971 .