论文信息 - Monolithic p-i-n-FET photoreceivers

Monolithic p-i-n-FET photoreceivers

We have investigated monolithic pin-FET photoreceivers in both the InP and GaAs systems. The GaAs-based circuits consisted of a single growth step in which the p-i-n diode was grown on top of the MESFET. The circuits exhibited flatband gains as high as 17 dB and bandwidths of 2.0 GHz. The InP circuits featured regrown MODFETs integrated with p-i-n diodes. These devices exhibited a gain of 17 dB and a bandwidth of 10 GHz.

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