Damage profiles in high-energy As implanted Si

Deep distributions of lattice disorder induced in Si by room temperature, high-energy (3 MeV), nonamorphizing As ion implants have been characterized by Rutherford backscattering spectrometry channeling (RBS-C), double crystal x-ray diffractometry (DCXD), and cross-sectional transmission electron microscopy (XTEM). After accurate calibration of the measurement conditions, the depth positions of the profiles of displaced atoms, lattice strain, and XTEM weak-beam dark-field contrast in a sample implanted at a dose of 1014 As cm−2 agree within 3%. This confirms that the quantities measured by the three techniques have a similar qualitative correlation with the depth profile of as-implanted damage. The shape of the disorder profiles indicates different rates of damage accumulation as a function of depth, which have been characterized by a series of DCXD measurements at doses in the range 1012–1014 As cm−2. The problem of a quantitative determination of the number of defects is also addressed. In particular, t...

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