Ohmic contacts formed on single- and poly-crystalline silicon using ion implantation and low-temperature annealing

The evolution in integrated-circuit technology is towards lower process temperatures and a consequential decrease in layer junction depths, a step that may not be compatible with ohmic contact formation and low sheet resistance layers using present technology. In this letter, we present a method whereby ohmic contacts are made to antimony ion-implanted layers of both single and polycrystalline silicon that are annealed at temperatures less than 700°C. Experimental results suggest that these contacts and the shallow relatively low sheet resistance layers produced offer considerable promise for future generation integrated-circuit technology.