论文信息 - Optical critical dimension measurements for patterned media with 10's nm feature size

Optical critical dimension measurements for patterned media with 10's nm feature size

Patterned media is expected to be implemented in future generations of hard disk drives to provide data storage at densities exceeding 1012 bits/in2 and beyond. The implementation of patterned media, which would involve developing processing methods to offer high resolution (small bits), regular patterns, and high density, has posed a number of metrology challenges. Optical Critical Dimension (OCD) is the leading candidate to overcome the metrology challenges for patterned media. This paper presents the successful OCD measurements on the critical dimensions, sidewall-angles, and detailed sidewall shape of gratings of quartz template and imprint disk with pitch as small as 57nm.

[1] Bruno La Fontaine,et al. Extending scatterometry to the measurements of sub 40 nm features, double patterning structures, and 3D OPC patterns , 2008, SPIE Advanced Lithography.

[2] Weidong Yang,et al. Line-profile and critical dimension measurements using a normal incidence optical metrology system , 2002, 13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259).

[3] Ray Hoobler,et al. Optical critical dimension (OCD) measurments for profile monitoring and control: applications for mask inspection and fabrication , 2003, SPIE Photomask Technology.

[4] S. Chou,et al. Imprint Lithography with 25-Nanometer Resolution , 1996, Science.

[5] S. Piramanayagam,et al. Patterned media towards Nano-bit magnetic recording: fabrication and challenges. , 2007, Recent patents on nanotechnology.

[6] Kim Y. Lee,et al. Step and flash imprint lithography for manufacturing patterned media , 2009 .

[7] Todd C. Bailey,et al. Characterization and modeling of volumetric and mechanical properties for step and flash imprint lithography photopolymers , 2001 .