Cu(InGa)Se2 Solar Cells

Cu(In,Ga)Se2 (CIGS) solar cells were characterized in cross section using electron beam induced current (EBIC) and synchrotron based x-ray fluorescence (XRF) measurements. Samples with varying gallium ratios and growth methods were compared. A correlation was observed between the compositional gallium grading profile from XRF and carrier activity seen in EBIC through the thickness of the CIGS layer. Samples with steep back grading showed carrier activity isolated near the CIGS/CdS interface, whereas a more uniform grading resulted in carrier activity seen throughout the absorber layer. 'Notch' grading showed only slight variation in EBIC profile compared to a back graded sample with similar gallium ratios.

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