Accurate Modeling of Cryogenic Temperature Effects in 10-nm Bulk CMOS FinFETs Using the BSIM-CMG Model

In this letter, we have proposed modifications to the existing BSIM-CMG compact model to enhance its ability to model the behavior of short channel bulk FinFETs (both n and p-type) from room temperature down to cryogenic temperatures (10K). The proposed model is highly accurate in capturing the subthreshold swing, threshold voltage, and effective mobility trends observed in FinFET cryogenic operation. For efficient optimization of the proposed model parameters, we have proposed an adequate modeling strategy. We have compared convergence time between the existing BSIM-CMG model and the proposed model by simulating a reasonably large circuit using pseudo-inverters.

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