Recent developments in III–V semiconducting nanowires for high-performance photodetectors

Recently, high-performance III–V semiconductor nanowires (NWs) have been extensively explored as promising active material candidates for high-sensitivity and broad-spectrum photodetectors operating at room temperature, which would have potential application in integrated optoelectronic devices for photovoltaics, radiation imaging, sensing, and information communications and processing. In this review, we present a comprehensive overview of the recent advances in the study of III–V NW-based photodetectors operating in the UV, visible and infrared spectral range, starting from the cost-effective synthesis and assembly of III–V NWs, the precise manipulation of their optoelectronic properties, and all the way to their different types of utilizations in photodetection and solar cells. Specifically, the synthesis methods and growth mechanisms of typical III–V NWs are discussed, emphasizing the low-cost solid-source chemical vapor deposition (CVD) technique, which has been widely employed in the growth of various III–V NW materials due to the setup simplicity as well as the excellent process controllability. The optoelectronic properties of these synthesized NWs, such as light absorption and photoconductive gain, are then investigated accordingly. Effective light absorption and extremely high photoconductive gain have been demonstrated, confirming their suitability as active components for photodetector applications. By utilizing the recently developed contact printing method, high-performance III–V NW solar cells can also be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly indicates the outstanding versatility and promising perspective of these NW Schottky photovoltaics for next-generation smart solar energy harvesting devices. Towards the end, we also discuss the progress made and the challenges in the research of high-performance photodetectors and photovoltaic devices based on III–V NWs.

[1]  Jr-Hau He,et al.  Giant Efficiency Enhancement of GaAs Solar Cells with Graded Antireflection Layers Based on Syringelike ZnO Nanorod Arrays , 2011 .

[2]  D. Thompson,et al.  GaAs core--shell nanowires for photovoltaic applications. , 2009, Nano letters.

[3]  E. Bakkers,et al.  Surface passivated InAs/InP core/shell nanowires , 2010 .

[4]  Hao Wang.  High gain single GaAs nanowire photodetector , 2013 .

[5]  Jing Guo,et al.  Ballistic Inas Nanowire Transistors , 2022 .

[6]  Zhiyong Fan,et al.  Synthesis, contact printing, and device characterization of Ni-catalyzed, crystalline InAs nanowires , 2008, 0807.0946.

[7]  Lars Samuelson,et al.  Solid-phase diffusion mechanism for GaAs nanowire growth , 2004, Microscopy and Microanalysis.

[8]  P. Specht,et al.  Phase separation in In x Ga1− x N , 2007 .

[9]  Jared J. Hou,et al.  Controllable p-n switching behaviors of GaAs nanowires via an interface effect. , 2012, ACS nano.

[10]  Peidong Yang,et al.  Light trapping in silicon nanowire solar cells. , 2010, Nano letters.

[11]  C. Jagadish,et al.  Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs , 2006, cond-mat/0610567.

[12]  Charles M. Lieber,et al.  A laser ablation method for the synthesis of crystalline semiconductor nanowires , 1998, Science.

[13]  H. Tu,et al.  Study of As precipitates in LEC SI–GaAs wafer by Raman probe , 2000 .

[14]  Zongfu Yu,et al.  Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays. , 2009, Nano letters.

[15]  A. Javey,et al.  Toward the Development of Printable Nanowire Electronics and Sensors , 2009 .

[16]  L. Lauhon,et al.  Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core-Shell Nanowire Transistors. , 2015, Nano letters.

[17]  B. S. Kang,et al.  UV photoresponse of single ZnO nanowires , 2005 .

[18]  Zhiyong Fan,et al.  Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing. , 2008, Nano letters.

[19]  Myung-Ho Bae,et al.  Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays , 2015, Scientific Reports.

[20]  S. T. Lee,et al.  Photoconductive characteristics of single-crystal CdS nanoribbons. , 2006, Nano letters.

[21]  Jun Liu,et al.  Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. , 2007, Nature nanotechnology.

[22]  Ning Han,et al.  Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices. , 2012, ACS nano.

[23]  Ning Han,et al.  High-performance indium phosphide nanowires synthesized on amorphous substrates: from formation mechanism to optical and electrical transport measurements , 2012 .

[24]  Zhiyong Fan,et al.  Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics. , 2012, Chemical Society reviews.

[25]  J. Petta,et al.  Correlating the nanostructure and electronic properties of InAs nanowires. , 2009, Nano letters.

[26]  Lars-Erik Wernersson,et al.  Diameter-Dependent photocurrent in InAsSb nanowire infrared photodetectors. , 2013, Nano letters.

[27]  Bahram Nabet,et al.  Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors , 2011 .

[28]  Chinhua Wang,et al.  Broadband enhancement of coaxial heterogeneous gallium arsenide single‐nanowire solar cells , 2015 .

[29]  Zhiyong Fan,et al.  Diameter-dependent electron mobility of InAs nanowires. , 2009, Nano letters.

[30]  Nathan S Lewis,et al.  Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications. , 2010, Nature materials.

[31]  Emily D. Kosten,et al.  Ray optical light trapping in silicon microwires: exceeding the 2n(2) intensity limit. , 2011, Optics express.

[32]  A. Alec Talin,et al.  A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[33]  F. Dimroth,et al.  InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit , 2013, Science.

[34]  T. Fukui,et al.  A III–V nanowire channel on silicon for high-performance vertical transistors , 2012, Nature.

[35]  Yihe Liu,et al.  A GaN Nanowire-Based Photodetector With Ag Nanowires as Transparent Electrodes , 2016, IEEE Photonics Technology Letters.

[36]  Joshua E-Y Lee,et al.  Diameter dependence of electron mobility in InGaAs nanowires , 2013 .

[37]  Xiangfeng Duan,et al.  High-performance thin-film transistors using semiconductor nanowires and nanoribbons , 2003, Nature.

[38]  J. González,et al.  Transport properties of two finite armchair graphene nanoribbons , 2013, Nanoscale Research Letters.

[39]  G. Yi.  Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications , 2012 .

[40]  Jared J. Hou,et al.  Surface roughness induced electron mobility degradation in InAs nanowires , 2013, Nanotechnology.

[41]  Zhiyong Fan,et al.  Single InAs nanowire room-temperature near-infrared photodetectors. , 2014, ACS nano.

[42]  Zhiyong Fan,et al.  Parallel Array Inas Nanowire Transistors for Mechanically Bendable, Ultrahigh Frequency Electronics , 2022 .

[43]  P. Krogstrup,et al.  Single-nanowire solar cells beyond the Shockley-Queisser limit , 2013, 1301.1068.

[44]  M. Heiss,et al.  Fundamental limits in the external quantum efficiency of single nanowire solar cells , 2011 .

[45]  F. H. Julien,et al.  GaN nanowire ultraviolet photodetector with a graphene transparent contact , 2013 .

[46]  C. Jagadish,et al.  Room temperature GaAsSb single nanowire infrared photodetectors , 2015, Nanotechnology.

[47]  Jared J. Hou,et al.  Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires. , 2012, ACS nano.

[48]  Suman Datta,et al.  Electron transport in multigate In x Ga 1-x as nanowire FETs: from diffusive to ballistic regimes at room temperature. , 2014, Nano letters.

[49]  S. S. Wang,et al.  A High-Responsivity GaN Nanowire UV Photodetector , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[50]  Gerhard Abstreiter,et al.  Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy , 2008 .

[51]  Chennupati Jagadish,et al.  Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires. , 2014, Nano letters.

[52]  Xiaolin Zheng,et al.  Fabrication of nanowire electronics on nonconventional substrates by water-assisted transfer printing method. , 2011, Nano letters.

[53]  Michael Grätzel,et al.  Gallium arsenide p-i-n radial structures for photovoltaic applications , 2009 .

[54]  Linyou Cao,et al.  Engineering light absorption in semiconductor nanowire devices. , 2009, Nature materials.

[55]  Charles M Lieber,et al.  Coaxial multishell nanowires with high-quality electronic interfaces and tunable optical cavities for ultrathin photovoltaics , 2012, Proceedings of the National Academy of Sciences.

[56]  A. Pan,et al.  Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μm , 2015 .

[57]  Peidong Yang,et al.  Nanowire dye-sensitized solar cells , 2005, Nature materials.

[58]  Wei Lu,et al.  High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios. , 2015, Small.

[59]  Zhiyong Fan,et al.  Monolayer resist for patterned contact printing of aligned nanowire arrays. , 2009, Journal of the American Chemical Society.

[60]  J. Rogers,et al.  Monolithic III‐V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy , 2014, Advanced materials.

[61]  A. Javey,et al.  Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors. , 2013, Physical chemistry chemical physics : PCCP.

[62]  Wei Lu,et al.  TOPICAL REVIEW: Semiconductor nanowires , 2006 .

[63]  Xiaocheng Jiang,et al.  InAs/InP radial nanowire heterostructures as high electron mobility devices. , 2007, Nano letters.

[64]  Kuei-Hsien Chen,et al.  Ultrahigh photocurrent gain in m-axial GaN nanowires , 2007 .

[65]  Ching-Fuh Lin,et al.  GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells with incorporating electron blocking poly(3-hexylthiophene) layer , 2012 .

[66]  Charles M. Lieber,et al.  Epitaxial core–shell and core–multishell nanowire heterostructures , 2002, Nature.

[67]  A. Javey,et al.  Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn. , 2010, Nano letters.

[68]  Chennupati Jagadish,et al.  Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process. , 2007, Nano letters.

[69]  Shadi A Dayeh,et al.  High electron mobility InAs nanowire field-effect transistors. , 2007, Small.

[70]  Z. Fan,et al.  Nanomaterials and nanostructures for efficient light absorption and photovoltaics , 2012 .

[71]  E. Monroy,et al.  Room-temperature photodetection dynamics of single GaN nanowires. , 2012, Nano letters.

[72]  R. LaPierre,et al.  III–V nanowire photovoltaics: Review of design for high efficiency , 2013 .

[73]  Lars Samuelson,et al.  Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires. , 2005, Nano letters.

[74]  Yu Huang,et al.  Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices , 2001, Nature.

[75]  GaAs/AlGaAs nanowire photodetector. , 2014, Nano letters.

[76]  Jared J. Hou,et al.  Tunable Electronic Transport Properties of Metal‐Cluster‐Decorated III–V Nanowire Transistors , 2013, Advanced materials.

[77]  A. Torres,et al.  Raman microprobe analysis of chemically revealed extended defects in GaAs , 1992 .

[78]  Ning Han,et al.  Facile synthesis and growth mechanism of Ni-catalyzed GaAs nanowires on non-crystalline substrates , 2011, Nanotechnology.

[79]  C. Soci,et al.  ZnO nanowire UV photodetectors with high internal gain. , 2007, Nano letters.

[80]  Lars-Erik Wernersson,et al.  Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon. , 2016, Nano letters.

[81]  A. Pan,et al.  Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors , 2015, Nano-Micro Letters.

[82]  W. Lu,et al.  Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature , 2014, Advanced materials.

[83]  F. Julien,et al.  Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire. , 2010, Nano letters.

[84]  Jared J. Hou,et al.  GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties. , 2013, ACS nano.

[85]  H. Leipner,et al.  Why are arsenic clusters situated at dislocations in gallium arsenide , 2003 .

[86]  Yuming Cui,et al.  One-pot synthesis of α-Fe2O3 nanospheres by solvothermal method , 2013, Nanoscale Research Letters.

[87]  Louis E. Brus,et al.  Luminescence Photophysics in Semiconductor Nanocrystals , 1999 .

[88]  Optical design of a mid-wavelength infrared InSb nanowire photodetector. , 2016, Nanotechnology.

[89]  Ning Han,et al.  Crystalline GaSb nanowires synthesized on amorphous substrates: from the formation mechanism to p-channel transistor applications. , 2013, ACS applied materials & interfaces.

[90]  Ning Han,et al.  Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires , 2014, Nature Communications.

[91]  Huiyun Liu,et al.  Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon , 2013, Nature Communications.

[92]  Jared J. Hou,et al.  Crystal phase and growth orientation dependence of GaAs nanowires on NixGay seeds via vapor-solid-solid mechanism , 2011 .

[93]  Ning Han,et al.  High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics. , 2015, ACS applied materials & interfaces.