论文信息 - Low Temperature Epitaxy of Si on Dihydride-Terminated Si (001): Energetic Versus Thermal Growth - 字舞流文

Low Temperature Epitaxy of Si on Dihydride-Terminated Si (001): Energetic Versus Thermal Growth

H. Atwater | M. Taylor | M. Murty

[1] Atwater,et al. Crystal-state-amorphous-state transition in low-temperature silicon homoepitaxy. , 1994, Physical review. B, Condensed matter.

[2] A. Kellock,et al. Very low temperature (<400 °C) silicon molecular beam epitaxy: The role of low energy ion irradiation , 1993 .

[3] C. Otis,et al. Internal energy distributions of laser ablated species from YBa2Cu3O7−δ , 1993 .

[4] L. Feldman,et al. Low‐temperature homoepitaxy on Si(111) , 1991 .

[5] Eaglesham,et al. Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100). , 1990, Physical review letters.

[6] Tadahiro Ohmi,et al. Formation of device‐grade epitaxial silicon films at extremely low temperatures by low‐energy bias sputtering , 1989 .

[7] M. Henzler,et al. Adsorption of atomic hydrogen on clean cleaved silicon (111) , 1983 .

[8] G. B. Anderson,et al. Low Temperature Epitaxy on H-Passivated Si(100) by Sputter Deposition , 1992 .

[9] D. Geohegan. In Situ Laser Ablation Plasma Diagnostics in the Film Growth Regime - Effects of Ambient Background Gases , 1990 .